MTE652T & MTE652T-I

In stock
MTE652T & MTE652T-I
Brand: Transcend

DRAM Cache embedded

Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed

Wide-temperature model available: promised operational reliability in a wide temperature range (from -40 to 85)

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Transcend MTE652T M.2 SSD features PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve the highest transfer speeds. Based on state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. The MTE652T has built-in DRAM cache for fast access, and is fully tested in-house to guarantee reliability in mission-critical applications, ensuring an endurance rating of 3K Program/Erase cycles.

Dimensions 80 mm x 22 mm x 3.58 mm (3.15" x 0.87" x 0.14")
Weight 9 g (0.32 oz)
Form Factor
  • M.2
M.2 Type
  • 2280-D2-M


Bus Interface
  • NVMe PCIe Gen3 x4


Flash Type
  • 3D TLC NAND flash
  • 128 GB/
  • 256 GB/
  • 512 GB

Operating Environment

Operating Voltage
  • 3.3V±5%
Operating Temperature
  • Standard
    0°C (32°F) ~ 70°C (158°F)
  • Wide Temp.
    -40°C (-40°F) ~ 85°C (185°F)
Storage Temperature -40°C (-40°F) ~ 85°C (185°F)
Humidity 5% ~ 95%
  • 1500 G, 0.5 ms, 3 axis
Vibration (Non-operating) 2.17 G (peak-to-peak), 10 Hz ~ 700 Hz (frequency)


Power Consumption (Operation) 3.3 watt(s)
Power Consumption (Sleep) 0.6 watt(s)


Sequential Read/Write (CrystalDiskMark, max.) Read: 2,100 MB/s
Write: 1,000 MB/s
4K Random Read/Write (IOmeter, max.) Read: 190,000 IOPS
Write: 290,000 IOPS
Mean Time Between Failures (MTBF) 3,000,000 hour(s)
Terabytes Written (Max.) 1,080 TB
Drive Writes Per Day (DWPD) 2 (3 yrs)
  • Speed may vary due to host hardware, software, usage, and storage capacity.
  • The workload used to rate DWPD may be different from your actual workload, which may vary due to host hardware, software, usage, and storage capacity.


We build to order