MTE652T & MTE652T-I
DRAM Cache embedded
Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
Wide-temperature model available: promised operational reliability in a wide temperature range (from -40℃ to 85℃)
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Transcend MTE652T M.2 SSD features PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve the highest transfer speeds. Based on state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. The MTE652T has built-in DRAM cache for fast access, and is fully tested in-house to guarantee reliability in mission-critical applications, ensuring an endurance rating of 3K Program/Erase cycles.
| Dimensions | 80 mm x 22 mm x 3.58 mm (3.15" x 0.87" x 0.14") |
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| Weight | 9 g (0.32 oz) |
| Form Factor |
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| M.2 Type |
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Interface |
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| Bus Interface |
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Storage |
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| Flash Type |
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| Capacity |
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Operating Environment |
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| Operating Voltage |
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| Operating Temperature |
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| Storage Temperature | -40°C (-40°F) ~ 85°C (185°F) |
| Humidity | 5% ~ 95% |
| Shock |
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| Vibration (Non-operating) | 2.17 G (peak-to-peak), 10 Hz ~ 700 Hz (frequency) |
Power |
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| Power Consumption (Operation) | 3.3 watt(s) |
| Power Consumption (Sleep) | 0.6 watt(s) |
Performance |
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| Sequential Read/Write (CrystalDiskMark, max.) | Read: 2,100 MB/s Write: 1,000 MB/s |
| 4K Random Read/Write (IOmeter, max.) | Read: 190,000 IOPS Write: 290,000 IOPS |
| Mean Time Between Failures (MTBF) | 3,000,000 hour(s) |
| Terabytes Written (Max.) | 1,080 TB |
| Drive Writes Per Day (DWPD) | 2 (3 yrs) |
| Note |
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